Business Wire

Toshiba Launches 30V N-Channel Common-Drain MOSFET Suitable for Devices with USB and for Protecting Battery Packs

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...
Business Wire

Toshiba Launches Small and Thin Common-Drain MOSFET Featuring Very Low On-Resistance Suitable for Quick Charging Devices

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM14N956L,” a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in ...
Hosted on MSN

Characterizing Non-Linear MOSFET Capacitance with a Tektronix AFG31000 Workflow

Power MOSFET capacitance isn't a fixed value—it's a highly non-linear function of voltage that standard LCR meters struggle to capture accurately at operating biases. By combining the waveform ...
AZoNano

Using Graphene Field Effect Transistors in Biosensors

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...