MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and ...
Microchip Technology Inc. recently expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave ICs (MMICs) and discrete transistors that cover ...
An 8 Gbps high-speed relay MMIC for an Automated Test Equipment (ATE) using a gallium nitride is developed and evaluated. Metal-Insulator-Semiconductor structure with a tantalum oxynitride is employed ...
The GMICP2731-10 helps maintain signal fidelity by allowing Earth stations to transmit at high RF levels without sacrificing the quality of the signal CHANDLER, Ariz.--(BUSINESS WIRE)--Satellite ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Mitsubishi will begin sampling its GaN MMIC power amplifiers for use in Ka band satellite communication earth stations next month. The MGFGC5H3102 and MGFGC5H3103 cover a frequency band of 27.5 GHz to ...
Groomed for splitting and combining GaN MMIC devices with 25-Ohm input and output impedances, the Model IPP-4011 impedance-transforming, 3-dB 90º hybrid coupler covers the 1 GHz to 2.5 GHz frequency ...
Heralded as the world’s smallest 5W power amplifier (PA) solution, the NPA1003 GaN PA MMIC measures 4 mm x 4 mm in a thermally-enhanced QFN package with RF inputs and outputs matched to 50?. Requiring ...
Offered as the smallest broadband 5-W PA solution, the NPA1003 GaN PA MMIC features a 4 x 4-mm thermally enhanced QFN package with RF input and output matched to 50 Ω. The highly integrated device ...
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