Silicon carbide (SiC) MOSFETs are increasingly used in high-power applications owing to their superior switching speeds, low on‐resistance and enhanced thermal performance. In order to achieve higher ...

Based on several high-power applications, we can see a clear trend of using power modules and discrete MOSFETs. There is a significant overlap between both, roughly from 10 kW to 50 kW. Modules fit ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Compared to other discrete packages, the number of parallel MOSFETs needed in high-current applications can be significantly reduced, if not eliminated, leading to overall lower system costs.

SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...

Electrification of transportation isn’t relegated to just passenger cars and commercial trucks—two- and three-wheelers and 3-wheelers are firmly in the midst of this transformation. As a result, the ...

The need to carefully manage the heat energy dissipated in Mosfets has led to a study of cooling techniques by Christopher Hill and Norman Stapelberg from Philips Semiconductors In most modern power ...