Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
Richardson RFPD has announced the availability of two 50V LDMOS RF power transistors, setting a new standard for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
DURHAM, N.C.-- (BUSINESS WIRE)-- Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for ...
AUSTIN, Texas--(BUSINESS WIRE)--Freescale Semiconductor (NYSE: FSL), a global leader in radio frequency (RF) power transistors, today announced the availability of 11 new commercial RF power LDMOS ...
NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...
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