Live Science on MSN

MIT's chip stacking breakthrough could cut energy use in power-hungry AI processes

Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.
Semiconductor Engineering

Oxides Bring Low Leakage Transistors To Leading-Edge Memories

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...
Morning Overview on MSN

MIT’s chip stacking leap could slash energy use for hungry AI chips

Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training ...
Electronic Design

Could This “2D” Transistor Process Transform Logic and Power Device Production?

The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
Semiconductor Engineering

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...