Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...

In July 2023, Renesas entered into a SiC wafer supply agreement with Wolfspeed, in which it provided a deposit of $2 billion.

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent of its senior secured notes; Renesas Electronics' wholly owned US ...

The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology.

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...

APEC 2026's Organising Committee has sent out a call to qualified experts to present a Professional Education Seminar during ...

Shaun Milano, Senior Director Applications Marketing, and Carsten Himmele, Segment Marketing Manager, both at Allegro ...