Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
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MIT's chip stacking breakthrough could cut energy use in power-hungry AI processes
Data doesn’t have to travel as far or waste as much energy when the memory and logic components are closer together.
From labs to fabs: Weebit ReRAM promises faster, smaller, and more reliable memory, drawing big tech attention ...
New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...
The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
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