Abstract: Several edge termination structures for high voltage 4H-SiC devices compatible with a planar MOSFET fabrication process are analyzed in this paper. The edge terminations' efficiency has been ...
While Wall Street panics, Edge members stay one step ahead of the chaos. With real-time portfolio alerts, actionable stock ideas, and pro-grade tools…you get the complete investor’s arsenal — ready to ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback