3D structure of a 7 nm-process-nodes SRAM was analyzed using an FIB-SEM. While cross section of p-MOSFETs shows gate electrodes and source/drain regions between gate electrodes, that of n-MOSFETs does gate electrodes and source/drain electrodes over a fin structure. X-sliced images depict p-MOSFET source/drain regions with characteristic diamond-shape structure, n-MOSFET source/drain regions under electrodes, gate electrodes covering fin structures and plugs contacting those electrodes. Segmente
1:43
3D structure of a 7 nm-process-nodes SRAM was analyzed using an FIB-SEM. While cross section of p-MOSFETs shows gate electrodes and source/drain regions between gate electrodes, that of n-MOSFETs does gate electrodes and source/drain electrodes over a fin structure. X-sliced images depict p-MOSFET source/drain regions with characteristic diamond-shape structure, n-MOSFET source/drain regions under electrodes, gate electrodes covering fin structures and plugs contacting those electrodes. Segmente
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